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A report on the effects of neutron irradiation on GaAs semiconductors

John K. Callahan

A report on the effects of neutron irradiation on GaAs semiconductors

by John K. Callahan

  • 258 Want to read
  • 3 Currently reading

Published .
Written in English

    Subjects:
  • Physics

  • The Physical Object
    Pagination42 p.
    Number of Pages42
    ID Numbers
    Open LibraryOL25490356M

    The effects of fast neutron damage on diffused GaAs laser diodes have been studied by observing the pre- and post-irradiation current-voltage characteristics and electroluminescence (EL) spectra at several temperatures between 75??K and ??K. The pre-irradiation diode current at high temperature is dominated by nonradiative space-charge region recombination.   For morphology investigation, GaSb, GaAs and GaP surfaces were irradiated with eV Ne, Kr, Ar and Xe. For possible nanopattern formation on the semiconductor surfaces, the irradiation .

    γ-irradiation dose,42 The defects produced by γ-irradiation may be structure sensitive which would be one reason for the discrepancies between different reports,57,60,61 Also, dose clearly plays a role in the performance of the devices after irradiation– For proton and electron damage, the device degradation scales with dose and. Fig. 4 Comparison of experimentally realized and computationally predicted GaAs gamma decay activity spectra resulting from 63 MeV proton irradiation with × 10 12 p + per cm 2 (associated with a device dose of 1 Mrad(Si) normal incidence proton beam) at 46 days post-irradiation. These results are used to validate the use of FISPACT-II in.

    @article{osti_, title = {Temperature dependent GaAs MMIC radiation effects}, author = {Anderson, W.T. and Roussos, J.A. and Gerdes, J.}, abstractNote = {The temperature dependence of pulsed neutron and flash x-ray radiation effects was studied in GaAs MMICs. Above room temperature the long term current transients are dominated by. Neutron irradiation effects on metal-gallium nitride contacts Evan J. Katz,1 Chung-Han Lin,1 Jie Qiu,2 Zhichun Zhang,1 Umesh K. Mishra,3 Lei Cao,2 and Leonard J. Brillson1,4,a) 1Department of Electrical & Computer Engineering, The Ohio State University, Columbus, Ohio , USA 2Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State.


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A report on the effects of neutron irradiation on GaAs semiconductors by John K. Callahan Download PDF EPUB FB2

Search the history of over billion web pages on the Internet. Calhoun: The NPS Institutional Archive Theses and Dissertations Thesis Collection A report on the effects of neutron irradiation on GaAs semiconductors.

Approved for public release; distribution is unlimitedthe effects of neutron irradiation in GaAs MMICs and small signal FETs were investigated. Carrier concentration and mobility were measured as a function of fluence, doping and channel depth. The individual components of the MMICs were also : John K.

Callahan. Neutron irradiation effects on diffused GaAs laser diodes (Technical report EE) [Bruce William Noel] on *FREE* shipping on qualifying : Bruce William Noel.

Report on the effects of neutron irradiation of GaAs semiconductors. Master's thesis. Technical Report Callahan, J K. The effects of neutron irradiation in GaAs MMICs and small-signal FETs were investigated.

Carrier concentration and mobility were measured as. The electrical characteristics of guarded Au- and Al-n GaAs Schottky diodes with free carrier concentration in the range of 3 x to 8 x cm -3 have been determined after neutron irradiation.

The effects of neutron irradiation on 3-μm-emitter, self-aligned-base, ohmic metal GaAs/AlGaAs heterojunction bipolar transistors and ICs based on molecular beam epitaxy have been experimentally. The U.S. Department of Energy's Office of Scientific and Technical Information.

A REPORT ON THE EFFECTS OF NEUTRON IRRADIATION ON GAAS SEMICONDUCTORS (U) PERSONA, IUJTHOR(S) Callahan, John K. i r * (gQPaRT)bME CovERED 14 DATE OF REPORT (Year Month Day) 5 PAGE (0,%1 Master's Thesis ;QoM To __ June 42 b. Authors: Zuleeg, R; Lehovec, K Publication Date: Sun Sep 01 EDT Research Org.: McDonnell Douglas Astronautics Co., Huntington Beach, Calif.

(USA). The neutron irradiation effect of polycrystalline Si1−xMnx semiconductor thin films has been studied. The Si1−xMnx semiconductor thin films were grown on SiO2/(1 0 0)Si substrate at °C by.

The electrical characteristics of GaAs metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) Schottky barrier diodes were investigated before and after fast-neutron irradiation. From current-voltage and capacitance-voltage data obtained over a wide temperature range, the mechanisms of barrier formation and current flow, as well as radiation effects on the electrical parameters are.

The situation for fast neutron irradiation of silicon and other materials is considerably different. A typical silicon recoil from a 1-MeV neutron collision would receive ∼50 keV, producing in turn ∼ other displaced atoms within a path length of ∼ nm, as illustrated in Fig. Such a cluster of displaced atoms cannot be adequately described as a superposition of simple defects: a.

Neutron Transmutation Doping in Hydrogenated Amorphous Silicon. Effects of Hydrogen on Defects in Neutron Irradiated Silicon. Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs. Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors: Application to GaAs.

A New Silicon Irradiation Facility in the Pluto. The infrared-absorption technique is used to study the EL2 defect in p-type GaAs subjected to thermal annealing and thermal-neutron-irradiation conditions. No evidence to support creation of this defect by neutron irradiation could be found.

This is in apparent disagreement with our earlier report [Manasreh and Fischer, Phys. Rev. B 39, ()]. Single-frequency GaAlAs/GaAs lasers O V Zhuravleva, N N Kiseleva, V D Kurnosov et al.-Recent citations Effect of reactor radiation on the operation of a neodymium inorganic liquid laser A F Dobrovol'skii et al-Annealing effects on multi-quantum well laser diodes after proton irradiation.

Schottky gate field effect transistors electron device noise gallium arsenide gamma-ray effects III-V semiconductors neutron effects generation recombination noise gamma irradiation GaAs MESFETs fast neutron fluence gamma dose noise enhancement gate depletion layer channel trapping effects neutron irradiation low frequency noise.

The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 10/sup 15/ cm/sup -2/, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear.

The USI GaAs sample exposed to the highest fluence (1×10 17 neutrons/cm 2) seemed to be fully depleted because of a high density of local space-charges related to point and extended defects created during neutron irradiation. Conclusions. This paper reports for the first time on optical parameters of USI GaAs before and after neutron.

Neutron and proton irradiations have been performed on self‐aligned GaAs metal‐semiconductor field‐effect transistors (MESFETs) and resistors utilizing shallow ion‐implanted channels. FET threshold voltage shifts during irradiation were lower than reported elsewhere (less than mV for a − V threshold FET irradiated by ×10 1.

View Abu Zayed M Saliqur Rahman’s profile on LinkedIn, the world's largest professional community. Abu Zayed M Saliqur has 6 jobs listed on their profile. See the complete profile on LinkedIn.The effects of neutron irradiation on several properties of both single and multiple stripe laser diodes have been examined.

Prior to fast neutron irradiation, total light output as a function of laser current, threshold current, near-field pattern, far-field pattern, and laser output wavelength spectra were measured at room temperature.We have studied the effect of neutron irradiation on the exciton absorption in n-GaAs crystals.

It is shown that the observed decrease in the absorption coefficient, broadening of the exciton peak, and its shift toward higher energies are caused by the electric and strain (compression) fields generated by the radiation-induced defects.